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1 | N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima " Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth " J. Appl. Phys., 107, Art. No. 013511 (2010) |
2 | H. Okuda, K. Morishita, K. Nakajima, K. Fujiwara, I. Yonenaga and S. Ochiai " Realization of a high-performance point-focusing monochromator for X-ray studies " Appl. Phys. Express, 3, Art. No. 046601 (2010) |
3 | H. Koizumi, K. Fujiwara and S. Uda " Role of the electric double layer in controlling the nucleation rate for tetragonal hen egg white lysozyme crystals by application of an external electric field " Cryst. Growth Des., 10, 2591-2595 (2010) |
4 | K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda " Growth mechanism of the Si <110> faceted dendrite " Phys. Rev. B, 81, Art. No. 224106 (2010) |
5 | R. Yaokawa, S. Uda, H. Kimura and K. Aota " Electrical conduction mechanism in nonstoichiometric La3Ta0.5Ga5.5O14 " J. Appl. Phys., 108, Art. No. 064112 (2010) |
6 | R. Gotoh, M. Arivanandhan, K. Fujiwara and S. Uda " Ga segregation during Czochralski-Si crystal growth with Ge codoping " J. Cryst. Growth, 312, 2865-2870 (2010) |
7 | X. Yang, K. Fujiwara, R. Gotoh, K. Maeda, J. Nozawa, H. Koizumi and S. Uda " Effect of twin spacing on the growth velocity of Si faceted dendrites " Appl. Phys. Lett., 97, Art. No. 172104 (2010) |
8 | H. Kimura, T. Taniuchi, S. Iida and S. Uda " Bulk crystal growth of congruent MgO-doped LiNbO3 crystal with stoichiometric structure and its second-harmonic-generation properties" J. Cryst. Growth, 312, 3425-3427 (2010) |
9 | H. Koizumi, S. Uda, K. Fujiwara and J. Nozawa " Effect of various precipitants on the nucleation rate of tetragonal hen egg-white lysozyme crystals in an AC external electric field " J. Cryst. Growth, 312, 3503-3508 (2010) |
10 | S. Uda and T. Tsubota " Ionic impurity transport and partitioning at the solid-liquid interface during growth of lithium niobate under an external electric field by electric current injection " J. Cryst. Growth, 312, 3650-3657 (2010) |
11 | M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima " Pattern formation mechanism of a periodically faceted interface during crystallization of Si " J. Cryst. Growth, 312, 3670-3674 (2010) |
12 | C. Y. Chung, R. Yaokawa, H. Mizuseki, S. Uda and Y. Kawazoe " First principles calculation of La3Ta0.5Ga5.5O14 crystal with acceptor-like intrinsic point defects " J. Appl. Phys., 108, Art. No. 113505 (2010) |