Publications
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| 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | International Conference | Patent |
2008
| Article | |
|---|---|
| 1 | Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, and T. Yao " Light emission due to dislocations in wurtzite ZnO bulk single crystals freshly introduced by plastic deformation " Appl. Phys. Lett., 92, 011922 (2008) |
| 2 | H. Kimura, S. Uda, O. Buzanov, X. Huang and S. Koh " The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method " J. Electroceram., 20, 73-80 (2008) |
| 3 | R. Simura, V. V. Kochurikhin, A. Yoshikawa and S. Uda " Growth of stable shaped single crystals by micro-pulling-down method with automatic power control system " J. Cryst. Growth, 310, 2148-2151 (2008) |
| 4 | H. Koizumi, H. Kawamoto, M. Tachibana and K. Kojima " Effect of intracrystalline water on micro-Vickers hardness in tetragonal hen egg-white lysozyme single crystals " J. Phys. D-Appl. Phys., 41, Art. No. 074019 (2008) |
| 5 | I. Yonenaga, H. Koizumi, Y. Ohno and T. Taishi " High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors " J. Appl. Phys., 103, Art. No. 093502 (2008) |
| 6 | X. Huang, M. Arivanandhan, R. Gotoh, T. Hoshikawa and S. Uda " Ga segregation in Czochralski-Si crystal growth with B codoping " J. Cryst. Growth, 310, 3335-3341 (2008) |
| 7 | S. Uda " Activities and equilibrium partition coefficients of solute constituents in the melts of oxide materials with and without solid solution " J. Cryst. Growth, 310, 3864-3868 (2008) |
| 8 | R. Simura, K. Nakamura and S.Uda " Change of melting temperature of non-doped and Mg-doped lithium niobate under an external electric field " J. Cryst. Growth, 310, 3873-3877 (2008) |
| 9 | M. Arivanandhan, X. Huang, S. Uda, G. Bhagavannarayana, N. Vijayan, K. Sankaranarayanan and P. Ramasamy " Directional growth of organic NLO crystal by different growth methods: A comparative study by means of XRD, HRXRD and laser damage threshold " J. Cryst. Growth, 310, 4587-4592 (2008) |
| 10 | T. Hoshikawa, X. Huang, K. Hoshikawa and S. Uda " Relationship between Gallium concentration and resistivity in Gallium-doped Czochralski silicon crystals: investigation of a conversion curve " Jpn. J. Appl. Phys., 47, 8691-8695 (2008) | Proceedings |
| 1 | S. Uda, X. Huang, M. Arivanandhan, R. Gotoh " Enhancement of Ga doping in Czochralski-grown Si crystal by B-codoping " The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), Nov. 10-14, 2008, Kona, Hawaii, USA, 61-65 (2008) | Review |
| 1 | R. Simura, S. Uda, X. Huang " Growth of the congruent lithium niobate single crystal from the stoichiometric composition under electric field induction " (in Japanese) Annual report of the Murata Science Foundation, 22, 306-315 (2008) | Book |
| 1 | S. Uda, S. Q. Wang, H. Kimura and X. Huang " Chapter 15; Phase Equilibria and Growth of Langasite-Type Crystals " Crystal Growth Technology, From Fundamentals and Simulation to Large-scale Production, H. J. Scheel and P. Capper, Eds., Wiley-VCH, Weinheim, 381-414 (2008) |
