Publications
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| 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | International Conference | Patent |
2005
| Article | |
|---|---|
| 1 | X. Huang, T. Taishi and K. Hoshikawa " Dislocation-free CZ-Si crystal growth without the thin Dash-neck " International Journal of Materials & Product Technology, 22, 64-83 (2005) |
| 2 | K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki " Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures " Materials Science in Semiconductor Processing, 8, 177-180 (2005) |
| 3 | K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami " Changes in elastic deformation of strained Si by microfabrication " Materials Science in Semiconductor Processing, 8, 181-185 (2005) |
| 4 | PW. Chien, SL. Wu, SJ. Chang, S. Koh and Y. Shiraki " High-performance SiGe heterostructure FET grown on silicon-on-insulator " Materials Science in Semiconductor Processing, 8, 367-370 (2005) |
| 5 | S. Uda, S.Q. Wang, N. Konishi, H. Inaba and J. Harada " Growth technology of piezoelectric langasite single crystal " J. Cryst. Growth, 275, 251-258 (2005) |
| 6 | K. Hoshikawa, X. Huang and T. Taishi " Heavily doped silicon crystals: neckless growth and robust wafers " J. Cryst. Growth, 275, 276-282 (2005) |
| 7 | X. Huang, T. Sato, M. Nakanishi, T. Taishi, K. Hoshikawa and S. Uda " Robust Si wafer " J. Cryst. Growth, 275, e401-e407 (2005) |
| 8 | I. Yonenaga, T. Taishi, X. Huang and K. Hoshikawa " Dislocation-impurity interaction in Czochralski-grown Si heavily doped with B and Ge " J. Cryst. Growth, 275, e501-e505 (2005) |
| 9 | S. Uda, X. Huang and S.Q. Wang " The effect of an external electric field on the growth of incongruent-melting material " J. Cryst. Growth, 275, e1513-e1519 (2005) |
| 10 | T. Taishi, X. Huang, I. Yonenaga and K. Hoshikawa " Behavior of the edge dislocation propagating along the growth direction in Czochralski Si crystal growth " J. Crystal Growth, 275, e2147-e2153 (2005) |
| 11 | X. Huang, S. Koh, K. Wu, M. Chen, T. Hoshikawa, K. Hoshikawa and S. Uda " Reaction at the interface between Si melt and a Ba-doped silica crucible " J. Cryst. Growth, 277, 154-161 (2005) |
| 12 | X. Zhou, Y. Kobayashi, V. Romanyuk, N. Ochuchi, M. Takeda, S. Tsunekawa and A. Kasuya " Preparation of silica encapsulated CdSe quantum dots in aqueous solution with the improved optical properties " Appl. Surf. Sci., 242, 281-286 (2005) |
| 13 | M. Myronov, T. Irisawa, S. Koh, OA. Mironov, TE. Whall, EHC. Parker and Y. Shiraki " Temperature dependence of transport properties of high mobility holes in Ge quantum wells " J. Appl. Phys., 97, Art. No.083701 (2005) |
| 14 | M. Wilde, K. Fukutani, S. Koh, K. Suwano and Y. Shiraki " Quantitive coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Gex surfaces " J. Appl. Phys., 98, Art. No.023503 (2005) |
| 15 | S. Uda, X. Huang and S. Koh " Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite " J. Cryst. Growth, 281, 481-491 (2005) |
| 16 | X. Q. Yan, X. M. Huang, S. Uda and M. W. Chen " Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon " Appl. Phys. Lett., 87, Art. No.191911 (2005) |
| 17 | S. Tsunekawa, K. Asami, S. Ito, M. Yashima and T. Sugimoto " XPS study of the phase transition in pure zirconium oxide nanocrystallites " Appl. Surf. Sci., 252, 1651-1656 (2005) | proceedings |
| 1 | S. Uda " Growth of langasite-type crystals and their device properties " 3rd International Workshop on Crystal Growth Technology, Beatenberg, Switzerland, 153-162 (2005) | Review |
| 1 | S. Uda, X. Huang, S. Koh " Electric-field assisted conversion of the incongruent-melting state to the congruent-melting state for the growth of langasite " Journal of the Japanese Association of Crystal Growth, 32, 325-333 (2005)(in Japanese) |
