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1 | H. Kimura, S. Uda, O. Buzanov, X. Huang and S. Koh " The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method " J. Electroceram., 20, 73-80 (2008) |
2 | R. Simura, V. V. Kochurikhin, A. Yoshikawa and S. Uda " Growth of stable shaped single crystals by micro-pulling-down method with automatic power control system " J. Cryst. Growth, 310, 2148-2151 (2008) |
3 | X. Huang, M. Arivanandhan, R. Gotoh, T. Hoshikawa and S. Uda " Ga segregation in Czochralski-Si crystal growth with B codoping " J. Cryst. Growth, 310, 3335-3341 (2008) |
4 | S. Uda " Activities and equilibrium partition coefficients of solute constituents in the melts of oxide materials with and without solid solution " J. Cryst. Growth, 310, 3864-3868 (2008) |
5 | R. Simura, K. Nakamura and S.Uda " Change of melting temperature of non-doped and Mg-doped lithium niobate under an external electric field " J. Cryst. Growth, 310, 3873-3877 (2008) |
6 | M. Arivanandhan, X. Huang, S. Uda, G. Bhagavannarayana, N. Vijayan, K. Sankaranarayanan and P. Ramasamy " Directional growth of organic NLO crystal by different growth methods: A comparative study by means of XRD, HRXRD and laser damage threshold " J. Cryst. Growth, 310, 4587-4592 (2008) |
7 | T. Hoshikawa, X. Huang, K. Hoshikawa and S. Uda " Relationship between Gallium concentration and resistivity in Gallium-doped Czochralski silicon crystals: investigation of a conversion curve " Jpn. J. Appl. Phys., 47, 8691-8695 (2008) | Proceedings |
1 | 宇田聡 「外部電場印加による酸化物高温超伝導体物質の調和融解成長への変換」 2008 旭硝子財団 助成研究発表会 要旨集, 22-23 (2008) |
2 | 宇田聡 「バルク結晶成長の新展開 -外場を利用した新しい結晶育成技術-」 第78回金研夏期講習会テキスト, 13-38 (2008) |
3 | S. Uda, X. Huang, M. Arivanandhan, R. Gotoh " Enhancement of Ga doping in Czochralski-grown Si crystal by B-codoping " The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), Nov. 10-14, 2008, Kona, Hawaii, USA, 61-65 (2008) |
Review | |
1 | 宇田聡 「固液相平衡化学ポテンシャルの外部電場印加制御による非調和融解物質の調和融解性への変換」 第38回三菱財団事業報告書(平成19年度), 203-204 (2008) |
2 | 宇田聡、黄新明 「外部電場印加による酸化物高温超伝導体物質の成長ダイナミクスへの影響」 日本結晶成長学会誌, 35, 74-80 (2008) |
3 | 宇田聡 「果たしてバルク結晶成長でナノ制御は可能だろうか?」 研友, 65, 7-16 (2008) |
4 | 志村玲子、宇田聡、黄新明 「電場印加によるニオブ酸リチウムの化学量論組成融液からの一致溶融成長単結晶の育成」 年報/村田学術振興財団, 22, 306-315 (2008) |
Book | |
1 | S. Uda, S. Q. Wang, H. Kimura and X. Huang " Chapter 15; Phase Equilibria and Growth of Langasite-Type Crystals " Crystal Growth Technology, From Fundamentals and Simulation to Large-scale Production, H. J. Scheel and P. Capper, Eds., Wiley-VCH, Weinheim, 381-414 (2008) |