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1 | X. Huang, T. Taishi and K. Hoshikawa " Dislocation-free CZ-Si crystal growth without the thin Dash-neck " International Journal of Materials & Product Technology, 22, 64-83 (2005) |
2 | S. Uda, S.Q. Wang, N. Konishi, H. Inaba and J. Harada " Growth technology of piezoelectric langasite single crystal " J. Cryst. Growth, 275, 251-258 (2005) |
3 | X. Huang, T. Sato, M. Nakanishi, T. Taishi, K. Hoshikawa and S. Uda " Robust Si wafer " J. Cryst. Growth, 275, e401-e407 (2005) |
4 | S. Uda, X. Huang and S.Q. Wang " The effect of an external electric field on the growth of incongruent-melting material " J. Cryst. Growth, 275, e1513-e1519 (2005) |
5 | X. Huang, S. Koh, K. Wu, M. Chen, T. Hoshikawa, K. Hoshikawa and S. Uda " Reaction at the interface between Si melt and a Ba-doped silica crucible " J. Cryst. Growth, 277, 154-161 (2005) |
6 | S. Uda, X. Huang and S. Koh " Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite " J. Cryst. Growth, 281, 481-491 (2005) |
7 | X. Q. Yan, X. M. Huang, S. Uda and M. W. Chen " Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon " Appl. Phys. Lett., 87, Art. No.191911 (2005) |
8 | S. Tsunekawa, K. Asami, S. Ito, M. Yashima and T. Sugimoto " XPS study of the phase transition in pure zirconium oxide nanocrystallites " Appl. Surf. Sci., 252, 1651-1656 (2005) | Proceedings |
1 | 宇田聡、黄新明、黄晋二 「外場を利用した非調和融解物質の調和融解成長の試み-ランガサイト単結晶育成の場合-」 (独)日本学術振興会弾性波素子技術第150委員会第93回研究会資料, 1-10 (2005) |
2 | S. Uda " Growth of langasite-type crystals and their device properties " 3rd International Workshop on Crystal Growth Technology, Beatenberg, Switzerland, 153-162 (2005) |
3 | 宇田聡 " ランガサイト型単結晶の育成とその圧電応用特性について " 第34回EMシンポジウム, 57-64 (2005) | Review |
1 | 宇田聡、黄新明、黄晋二 「外部電場印加による非調和融解状態の調和融解化-非調和融解ランガサイト結晶の調和融解成長-」 日本結晶成長学会誌, 32, 325-333 (2005) |