Prof. Satoshi Uda

Prof. Satoshi Uda

Phone : +81-22-215-2100
Fax : +81-22-215-2101



Ph.D.  Materials Science and Engineering, Stanford University, 1992
MS   Materials Science and Engineering, Stanford University, 1989
MS   Geology, University of Tokyo, 1981
BS   Geology, University of Tokyo, 1979

Research Occupations

2003.04 - present  Professor, Institute for Materials Research, Tohoku University.
1981.04 - 2003.03  Work for Mitsubishi Materials Co., Ltd. at Advanced Technology Research Laboratory, Central Research Institute,
          Electronics Device R&D center and Planning Division
1987.09 - 1992.06  Graduate student at Dept. of Materials Science and Engineering, Stanford University.

Research Interests

(i) Crystal growth:
 Transport phenomena, solidification process, partitioning with or without field modifications, morphology, interface dynamics, composite structure, experiments in Czochralski, laser-heated pedestal growth, micro-pulling down, Molecular Beam Epitaxy processes for piezoelectric and nonlinear optical materials

(ii) Physics and chemistry of melt:
 Modeling and experiments in nucleation and growth associated with free energy of melt

(iii) Computer modeling: 
 Simulation of nucleation and growth, multi-variable nonlinear optimization for growth dynamics problem

Representative publications

  1. S. Uda, X. Huang and S. Koh, "Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite", J. Cryst. Growth, 281 (2005) 481-491.

  2. S. Uda, H. Inaba, J. Harada and K. Hoshikawa, "Growth of langasite via Bridgman technique along [0001], [2-1-10] and [01-11] for piezoelectric applications", J. Cryst. Growth, 271 (2004) 229-237.

  3. S.Q. Wang and S. Uda, "Phase Relations around Langasite (La3Ga5SiO14) in the System La2O3-Ga2O3-SiO2 in Air", J. Cryst. Growth, 250 (2003) 463-470.

  4. S. Uda, S.Q.Wang, N. Konishi, H. Inaba and J. Harada, "Growth Habits of 3 and 4-inch Langasite Single Crystals", J. Cryst. Growth, 237-239 (2002) 707-713.

  5. S. Uda and O. Buzanov, "Growth of a 3-inch langasite crystal with clear faceting", J. Cryst. Growth, 211 (2000) 318-324.

  6. S. Q. Wang, J. Harada and S. Uda, "Study of congruent melt composition of langasita and its effect on crystal quality", J. Cryst. Growth, 219 (2000) 263-268.

  7. T. Sugawara, R. Komatsu and S. Uda, "Growth and characterization of lithium tetraborate crystals grown in phase-matching directions", J. Cryst. Growth, 193(1998) 364-369.

  8. V. Petrov, F. Rotermund, F. Noack, R. Komatsu, T. Sugawara and S. Uda, "Vacuum Ultraviolet application of Li2B4O7 crystals: generation of 100-fs pulses down to 170 nm", J. Appl. Phys., 84 (1998) 5887-5892.

  9. S. Uda, J. Kon, J. Ichikawa, K. Inaba, K.Shimamura and T. Fukuda, "Interface Field-modified Solute Partitioning during Mn:LiNbO3 Crystal Fiber Growth by Micro-Pulling Down Method; Part II: Radial Distribution Analysis",J. Cryst. Growth, 182 (1997) 403-415.

  10. S. Uda, J. Kon, K. Shimamura and T. Fukuda, "Analysis of Ge Distribution in SixGe1-x Single Crystal Fiber Grown by Micro-pulling Down Method", J. Cryst. Growth, 167 (1996) 64-73.

  11. S. Uda, "Influence of Unit Cluster Size on Nucleation Rate of Li2B4O7 Melt", J. Crystal Growth, 140 (1994) 128-138.

  12. W. A. Tiller and S. Uda, "Intrinsic LiNbO3 Melt Species Partitioning at the Congruent Melt Composition II. Dynamic Interface Case", J. Cryst. Growth, 129 (1993) 341-361.

  13. S. Uda and W. A. Tiller, "Cr Migration Associated with Interface Electric Fields During Transient LiNbO3 Crystal Growth", J. Crystal Growth, 126 (1993) 396-412.

  14. S. Uda and W. A. Tiller, "The Dissociation and Ionization of LiNbO3 Melts", J. Crystal Growth, 121 (1992) 155-190.

  15. S. Uda and W. A.Tiller, "The Influence of the Interface Electric Field on the Distribution Coefficient of Chromium in LiNbO3", J. Crystal Growth, 121 (1992) 93-110.